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Impact of the gate stack on the electrical performances of 3D multi-channel MOSFET (MCFET) on SOI

✍ Scribed by Emilie Bernard; T. Ernst; B. Guillaumot; N. Vulliet; X. Garros; V. Maffini-Alvaro; P. Coronel; T. Skotnicki; S. Deleonibus

Book ID
108271667
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
520 KB
Volume
52
Category
Article
ISSN
0038-1101

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πŸ“œ SIMILAR VOLUMES

Impact of laterally asymmetric channel a
Impact of laterally asymmetric channel and gate stack architecture on device performance of surrounding gate MOSFETs
✍ Harsupreet Kaur; Sneha Kabra; Subhasis Haldar; R. S. Gupta πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 310 KB

## Abstract A new device design laterally asymmetric channel gate stack (LACGAS) SGT is proposed, and its impact on device performance is examined. By using analytical modeling and numerical simulations, the novel features of this structure are studied, and it is demonstrated that LACGAS offers sup