✦ LIBER ✦
Impact of the TiN electrode deposition on the HfO2 band gap for advanced MOSFET gate stacks
✍ Scribed by C. Gaumer; E. Martinez; S. Lhostis; M.-J. Guittet; M. Gros-Jean; J.-P. Barnes; C. Licitra; N. Rochat; N. Barrett; F. Bertin; A. Chabli
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 495 KB
- Volume
- 88
- Category
- Article
- ISSN
- 0167-9317
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