✦ LIBER ✦

Impact of Ge Content and Recess Depth on the Leakage Current in Strained Heterojunctions

✍ Scribed by Rodriguez, A.L.; Gonzalez, M.B.; Eneman, G.; Claeys, C.; Kobayashi, D.; Simoen, E.; Tejada, J.A.J.

Book ID: 114620517
Publisher: IEEE
Year: 2011
Tongue: English
Weight: 609 KB
Volume: 58
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2011.2148723

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Impact of the Ge Content on the Bandgap-

Impact of the Ge Content on the Bandgap-Narrowing Induced Leakage Current of Recessed Source/Drain Junctions

✍ Gonzalez, M.B.; Simoen, E.; Vissouvanadin, B.; Verheyen, P.; Loo, R.; Claeys, C. 📂 Article 📅 2009 🏛 IEEE 🌐 English ⚖ 379 KB

Effect of Ge content and profile in the

Effect of Ge content and profile in the SiGe base on the performance of a SiGe/Si heterojunction bipolar transistor

✍ Mukul K. Das; N. R. Das; P. K. Basu 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 217 KB

In this paper, the effects of Ge content and profile shape on the performance of a SiGe-based heterojunction bipolar transistor (HBT) are investigated. The common-emitter current gain, the early voltage, and the transit time of SiGe HBTs are calculated and computed for different Ge profiles as well

On the origin of increase in substrate c

On the origin of increase in substrate current and impact ionization efficiency in strained-Si n- and p-MOSFETs

✍ Irisawa, T.; Numata, T.; Sugiyama, N.; Takagi, S. 📂 Article 📅 2005 🏛 IEEE 🌐 English ⚖ 409 KB

Impact of Donor Concentration, Electric

Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p n Junctions

✍ Eneman, G.; Wiot, M.; Brugere, A.; Casain, O.S.I.; Sonde, S.; Brunco, D.P.; De J 📂 Article 📅 2008 🏛 IEEE 🌐 English ⚖ 539 KB

Analysis of leakage currents and impact

Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime

✍ Henson, W.K.; Yang, N.; Kubicek, S.; Vogel, E.M.; Wortman, J.J.; De Meyer, K.; N 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 174 KB

[IEEE Proceedings of the 34th European S

[IEEE Proceedings of the 34th European Solid-State Device Research Conference - Leuven, Belgium (21-23 Sept. 2004)] Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) - Impact of STI-induced stress, inverse narrow width effect, and statistical V/sub TH/ variations on leakage currents in 120 nm CMOS

✍ Pacha, C.; Martin, B.; von Arnim, K.; Brederlow, R.; Schmitt-Landsiedel, D.; See 📂 Article 📅 2004 🏛 IEEE ⚖ 246 KB