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On the origin of increase in substrate current and impact ionization efficiency in strained-Si n- and p-MOSFETs

✍ Scribed by Irisawa, T.; Numata, T.; Sugiyama, N.; Takagi, S.


Book ID
114617789
Publisher
IEEE
Year
2005
Tongue
English
Weight
409 KB
Volume
52
Category
Article
ISSN
0018-9383

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