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Effect of band alignment and density of states on the collector current in p-Si/n-Si1-yCy/p-Si HBTs

✍ Scribed by Singh, D.V.; Hoyt, J.L.; Gibbons, J.F.


Book ID
114616992
Publisher
IEEE
Year
2003
Tongue
English
Weight
720 KB
Volume
50
Category
Article
ISSN
0018-9383

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A systematic investigation of the effect
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The hole wavefunctions, the energy levels and the sheet density of a strained p-Si/Si 1-x Ge x /p-Si selectively doped double heterojunction are investigated at T = 0 K, solving the Schrödinger and Poisson equations self-consistently. We present a systematic study taking into account all the modulat