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Origin of the Asymmetry in the Magnitude of the Statistical Variability of n- and p-Channel Poly-Si Gate Bulk MOSFETs

✍ Scribed by A. Asenov; A. Cathignol; B. Cheng; K. P. Mckenna; A. R. Brown; A. L. Shluger; D. Chanemougame; K. Rochereau; G. Ghibaudo

No coin nor oath required. For personal study only.

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