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Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs

✍ Scribed by Gregor Pobegen; Thomas Aichinger; Tibor Grasser; Michael Nelhiebel

Book ID: 113800503
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 496 KB
Volume: 51
Category: Article
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2011.06.024

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