Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs

✍ Scribed by Dalapati, G.K.; Chattopadhyay, S.; Kwa, K.S.K.; Olsen, S.H.; Tsang, Y.L.; Agaiby, R.; O'Neill, A.G.; Dobrosz, P.; Bull, S.J.

• Book ID: 114618228
• Publisher: IEEE
• Year: 2006
• Tongue: English
• Weight: 476 KB
• Volume: 53
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2006.872086