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[IEEE Proceedings of the 34th European Solid-State Device Research Conference - Leuven, Belgium (21-23 Sept. 2004)] Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) - Impact of STI-induced stress, inverse narrow width effect, and statistical V/sub TH/ variations on leakage currents in 120 nm CMOS

✍ Scribed by Pacha, C.; Martin, B.; von Arnim, K.; Brederlow, R.; Schmitt-Landsiedel, D.; Seegebrecht, P.; Berthold, J.; Thewes, R.

Book ID: 126620261
Publisher: IEEE
Year: 2004
Weight: 246 KB
Category: Article
ISBN-13: 9780780384781
DOI: 10.1109/ESSDER.2004.1356573

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