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[IEEE Proceedings of the IEEE 2001 International Interconnect Technology Conference - Burlingame, CA, USA (2001.06.6-2001.06.6)] Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461) - Leakage current mechanisms for damascene process of Cu/methylsilane-doped low-k chemical vapor deposited oxides

✍ Scribed by Wu, Z.C.; Chiang, C.C.; Wu, W.H.; Chen, M.C.; Jeng, S.M.; Li, L.J.; Jang, S.M.; Yu, C.H.; Liang, M.S.

Book ID: 126646451
Publisher: IEEE
Year: 2001
Weight: 349 KB
Category: Article
DOI: 10.1109/IITC.2001.930011

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