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[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - A high performance 90nm SOI technology with 0.992 μm/sup 2/ 6T-SRAM cell

✍ Scribed by Khare, M.; Ku, S.H.; Donaton, R.A.; Greco, S.; Brodsky, C.; Chen, X.; Chou, A.; DellaGuardia, R.; Deshpande, S.; Doris, B.; Fung, S.K.H.; Gabor, A.; Gribelyuk, M.; Holmes, S.; Jamin, F.F.; Lai, W.L.; Lee, W.H.; Li, Y.; McFarland, P.; Mo, R.; Mittl, S.; Narasimha, S.; Nielsen, D.; Purtell, R.; Rausch, W.; Sankaran, S.; Snare, J.; Tsou, L.; Vayshenker, A.; Wagner, T.; Wehella-Gamage, D.; Wu, E.; Wu, S.; Yan, W.; Barth, E.; Ferguson, R.; Gilbert, P.; Schepis, D.; Sekiguchi, A.; Goldblatt, R.; Welser, J.; Muller, K.P.; Agnello, P.

Book ID: 121740482
Publisher: IEEE
Year: 2002
Weight: 282 KB
Category: Article
ISBN-13: 9780780374621
DOI: 10.1109/IEDM.2002.1175865

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