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[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - A novel 0.79 μm/sup 2/ SRAM cell by KrF lithography and high performance 90 nm CMOS technology for ultra high speed SRAM

✍ Scribed by Soon-Moon Jung, ; Hyungshin Kwon, ; Jaehun Jeong, ; Wonseok Cho, ; Sungbong Kim, ; Hoon Lim, ; Kwangok Koh, ; Youngseop Rah, ; Jaekyun Park, ; Heesoo Kang, ; Gyuho Lyu, ; Joonbum Park, ; Chulsoon Chang, ; Youngchul Jang, ; Donggun Park, ; Kinam Kim, ; Moon Yong Lee,

Book ID: 118044070
Publisher: IEEE
Year: 2002
Weight: 239 KB
Volume: 0
Category: Article
ISBN-13: 9780780374621
DOI: 10.1109/iedm.2002.1175868

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