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[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - Soft error immune 0.46 μm/sup 2/ SRAM cell with MIM node capacitor by 65 nm CMOS technology for ultra high speed SRAM

✍ Scribed by Soon-Moon Jung, ; Hoon Lim, ; Wonseok Cho, ; Hoosung Cho, ; Hatae Hong, ; Jaehun Jeong, ; Sugwoo Jung, ; Hanbyung Park, ; Byoungkeun Son, ; Youngchul Jang, ; Kinam Kim,

Book ID: 120179933
Publisher: IEEE
Year: 2003
Weight: 282 KB
Edition: 1
Category: Article
ISBN-13: 9780780378728
DOI: 10.1109/IEDM.2003.1269281

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