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[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - Novel locally strained channel technique for high performance 55nm CMOS

โœ Scribed by Ota, K.; Sugihara, K.; Sayama, H.; Uchida, T.; Oda, H.; Eimori, T.; Morimoto, H.; Inoue, Y.


Book ID
124087584
Publisher
IEEE
Year
2002
Weight
222 KB
Category
Article
ISBN-13
9780780374621

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