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[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - Advanced gate dielectric materials for sub-100 nm CMOS

✍ Scribed by Iwai, H.; Ohmi, S.; Akama, S.; Ohshima, C.; Kikuchi, A.; Kashiwagi, I.; Taguchi, J.; Yamamoto, H.; Tonotani, J.; Kim, Y.; Ueda, I.; Kuriyama, A.; Yoshihara, Y.

Book ID: 124087586
Publisher: IEEE
Year: 2002
Weight: 239 KB
Category: Article
ISBN-13: 9780780374621
DOI: 10.1109/IEDM.2002.1175917

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