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[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - FinFET scaling to 10 nm gate length

✍ Scribed by Bin Yu, ; Leland Chang, ; Ahmed, S.; Haihong Wang, ; Bell, S.; Chih-Yuh Yang, ; Tabery, C.; Chau Ho, ; Qi Xiang, ; Tsu-Jae King, ; Bokor, J.; Chenming Hu, ; Ming-Ren Lin, ; Kyser, D.

Book ID: 124087585
Publisher: IEEE
Year: 2002
Weight: 277 KB
Category: Article
ISBN-13: 9780780374621
DOI: 10.1109/IEDM.2002.1175825

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