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[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation

✍ Scribed by Kedzierski, J.; Nowak, E.; Kanarsky, T.; Zhang, Y.; Boyd, D.; Carruthers, R.; Cabral, C.; Amos, R.; Lavoie, C.; Roy, R.; Newbury, J.; Sullivan, E.; Benedict, J.; Saunders, P.; Wong, K.; Canaperi, D.; Krishnan, M.; Lee, K.-L.; Rainey, B.A.; Fried, D.; Cottrell, P.; Wong, H.-S.P.; Ieong, M.; Haensch, W.

Book ID: 121399321
Publisher: IEEE
Year: 2002
Weight: 312 KB
Category: Article
ISBN-13: 9780780374621
DOI: 10.1109/IEDM.2002.1175824

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