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[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Direct evaluation of gate line edge roughness impact on extension profiles in sub-50mn N-MOSFETs

✍ Scribed by Fukutome, H.; Momiyarna, Y.; Kubo, T.; Tagawa, Y.; Aoyama, T.; Arimoto, H.

Book ID: 126671449
Publisher: IEEE
Year: 2004
Weight: 295 KB
Category: Article
ISBN-13: 9780780386846
DOI: 10.1109/IEDM.2004.1419179

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