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[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Long-retention ferroelectric-gate FET with a (HfO/sub 2/)/sub x/(Al/sub 2/O/sub 3/)/sub 1-x buffer-insulating layer for 1T FeRAM

✍ Scribed by Shigeki Sakai, Mitsue Takahashi

Book ID: 124049241
Publisher: IEEE
Year: 2004
Tongue: English
Weight: 259 KB
Category: Article
ISBN-13: 9780780386846
DOI: 10.1109/IEDM.2004.1419331

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