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[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO/sub 2/ stack

✍ Scribed by Tseng, H.-H.; Capasso, C.C.; Schaeffer, J.K.; Hebert, E.A.; Tobin, P.J.; Gilmer, D.C.; Triyoso, D.; Ramon, M.E.; Kalpat, S.; Luckowski, E.; Taylor, W.J.; Jeon, Y.; Adetutu, O.; Hegde, R.I.; Noble, R.; Jahanbani, M.; Chemali, C.E.; White, B.E.

Book ID: 126618775
Publisher: IEEE
Year: 2004
Weight: 273 KB
Category: Article
ISBN-13: 9780780386846
DOI: 10.1109/IEDM.2004.1419303

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