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[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions

✍ Scribed by Kah Wee Ang, ; King Jien Chui, ; Blimetsov, V.; Anyan Du, ; Balasubramanian, N.; Ming Fu Li, ; Samudra, G.; Yee-Chia Yee,

Book ID: 120085375
Publisher: IEEE
Year: 2004
Tongue: English
Weight: 211 KB
Category: Article
ISBN-13: 9780780386846
DOI: 10.1109/IEDM.2004.1419383

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