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[IEEE 5th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Singapore (27 Nov.-1 Dec. 1995)] Proceedings of 5th International Symposium on the Physical and Failure Analysis of Integrated Circuits - A new oxide breakdown degradation phenomenon in CMOS transistors

✍ Scribed by Teong-San Yeoh, ; Shze-Jer Hu,

Book ID: 126630333
Publisher: IEEE
Year: 1995
Weight: 331 KB
Category: Article
ISBN-13: 9780780327979
DOI: 10.1109/IPFA.1995.487614

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