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[IEEE 2012 IEEE Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2012.06.10-2012.06.11)] 2012 IEEE Silicon Nanoelectronics Workshop (SNW) - The impact of the carrier transport on the random dopant induced drain current variation in the saturation regime of advanced strained-silicon CMOS devices

✍ Scribed by Hsieh, E. R.; Chung, Steve S.; Tsai, C. H.; Huang, R. M.; Tsai, C. T.; Liang, C. W.

No coin nor oath required. For personal study only.

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