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[IEEE 2012 12th International Workshop on Junction Technology (IWJT) - Shanghai, China (2012.05.14-2012.05.15)] 2012 12th International Workshop on Junction Technology - Vacancy-type defects introduced by gas cluster ion implantation to Si probed by monoenergetic positron beams

✍ Scribed by Uedono, A.; Moriya, T.; Tsutsui, T.; Kimura, S.; Oshima, N.; Suzuki, R.; Ishibashi, S.; Matsui, H.; Narushima, M.; Ishikawa, Y.; Graf, M.; Yamashita, K.

Book ID: 126597625
Publisher: IEEE
Year: 2012
Weight: 755 KB
Category: Article
ISBN: 1467312568
DOI: 10.1109/IWJT.2012.6212816

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