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[IEEE 2012 12th International Workshop on Junction Technology (IWJT) - Shanghai, China (2012.05.14-2012.05.15)] 2012 12th International Workshop on Junction Technology - A novel MOSFET structure with asymmetric Schottky and P-N junction source/drain on bulk silicon substrate

✍ Scribed by Xu, Peng; Hu, Cheng; Chen, Mei-Gui; Zhu, Zhiwei; Zhang, David Wei; Wu, Dongping

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