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[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Fully analytic compact model of ballistic gate-all-around MOSFET with rectangular cross section

✍ Scribed by Numata, Tatsuhiro; Uno, Shigeyasu; Kamakura, Yoshinari; Mori, Nobuya; Nakazato, Kazuo

Book ID: 126742633
Publisher: IEEE
Year: 2011
Weight: 251 KB
Category: Article
ISBN: 1612844197
DOI: 10.1109/SISPAD.2011.6035044

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