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[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - The flexible compact SOI-MOSFET model HiSIM-SOI valid for any structural types

✍ Scribed by Miyake, M.; Kusu, S.; Kikuchihara, H.; Tanaka, A.; Shintaku, Y.; Ueno, M.; Nakashima, J.; Feldmann, U.; Mattausch, H. J.; Miura-Mattausch, M.; Yoshida, T.

Book ID: 126673799
Publisher: IEEE
Year: 2011
Weight: 489 KB
Category: Article
ISBN: 1612844197
DOI: 10.1109/SISPAD.2011.6034968

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