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[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Thermoelectromechanical simulation of GaN HEMTs

✍ Scribed by Ancona, M.G.; Binari, S.C.

Book ID: 120268346
Publisher: IEEE
Year: 2011
Weight: 691 KB
Category: Article
ISBN: 1612844197
DOI: 10.1109/SISPAD.2011.6035062

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