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[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Analytical approximation of complex band structures for band-to-band tunneling models

✍ Scribed by Guan, Ximeng; Kim, Donghyun; Saraswat, Krishna C.; Wong, H.-S. Philip

Book ID: 120813739
Publisher: IEEE
Year: 2011
Weight: 265 KB
Category: Article
ISBN: 1612844197
DOI: 10.1109/SISPAD.2011.6035076

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📜 SIMILAR VOLUMES

[IEEE 2011 International Conference on S

[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Thermoelectromechanical simulation of GaN HEMTs

✍ Ancona, M.G.; Binari, S.C. 📂 Article 📅 2011 🏛 IEEE ⚖ 691 KB

[IEEE 2011 International Conference on S

[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Study on carrier mobility in graphene nanoribbons

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[IEEE 2011 International Conference on S

[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - A compact model for early electromigration lifetime estimation

✍ de Orio, R. L.; Ceric, H.; Selberherr, S. 📂 Article 📅 2011 🏛 IEEE ⚖ 270 KB

[IEEE 2011 International Conference on S

[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Parallel preconditioning for spherical harmonics expansions of the Boltzmann transport equation

✍ Rupp, Karl; Grasser, Tibor; Jungel, Ansgar 📂 Article 📅 2011 🏛 IEEE ⚖ 139 KB

[IEEE 2011 International Conference on S

[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Quantum-mechanical modeling of NBTI in high-k SiGe MOSFETs

✍ Hehenberger, Ph.; Goes, W.; Baumgartner, O.; Franco, J.; Kaczer, B.; Grasser, T. 📂 Article 📅 2011 🏛 IEEE ⚖ 605 KB

[IEEE 2011 International Conference on S

[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Adaptive variable-order spherical harmonics expansion of the Boltzmann Transport Equation

✍ Rupp, Karl; Grasser, Tibor; Jungel, Ansgar 📂 Article 📅 2011 🏛 IEEE ⚖ 706 KB