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[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Quantum-mechanical modeling of NBTI in high-k SiGe MOSFETs

✍ Scribed by Hehenberger, Ph.; Goes, W.; Baumgartner, O.; Franco, J.; Kaczer, B.; Grasser, T.

Book ID: 120067656
Publisher: IEEE
Year: 2011
Weight: 605 KB
Category: Article
ISBN: 1612844197
DOI: 10.1109/SISPAD.2011.6035036

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📜 SIMILAR VOLUMES

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