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[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Accurate and global model of SOI H gate body-tied MOSFET for circuit simulator

✍ Scribed by Mochizuki, M.; Hayashi, H.; Ishii, S.; Ohira, S.; Kurachi, I.; Miura, N.

Book ID: 115496482
Publisher: IEEE
Year: 2011
Weight: 419 KB
Volume: 0
Category: Article
ISBN: 1612844197
DOI: 10.1109/sispad.2011.6035071

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