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[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Effect of the trap density and distribution of the silicon nitride layer on the retention characteristics of charge trap flash memory devices

✍ Scribed by You, Joo Hyung; Kim, Hyun Woo; Kim, Dong Hun; Kim, Tae Whan; Lee, Keun Woo

Book ID: 118128771
Publisher: IEEE
Year: 2011
Weight: 458 KB
Volume: 0
Category: Article
ISBN: 1612844197
DOI: 10.1109/sispad.2011.6035085

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