𝔖 Bobbio Scriptorium

✦ LIBER ✦

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Processes and Devices - Tokyo, Japan (2-4 Sept. 1996)] 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) - Robust simulation for the hysteresis phenomena of SOI MOSFET's by quasi-transient method

✍ Scribed by Ikeno, R.; Asada, K.

Book ID: 118027516
Publisher: Japan Soc. Appl. Phys
Year: 1996
Weight: 157 KB
Volume: 0
Category: Article
ISBN-13: 9780780327450
DOI: 10.1109/sispad.1996.865296

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📜 SIMILAR VOLUMES

[Japan Soc. Appl. Phys International Con

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Processes and Devices - Tokyo, Japan (2-4 Sept. 1996)] 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) - Simulation environment for semiconductor technology analysis

✍ Pichler, Ch.; Plasun, R.; Strasser, R.; Selberherr, S. 📂 Article 📅 1996 🏛 Japan Soc. Appl. Phys ⚖ 219 KB

[Japan Soc. Appl. Phys International Con

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Processes and Devices - Tokyo, Japan (2-4 Sept. 1996)] 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) - Inverse modeling profile determination: implementation issues and recent results

✍ Khalil, N.; Faricelli, J. 📂 Article 📅 1996 🏛 Japan Soc. Appl. Phys ⚖ 285 KB

[Japan Soc. Appl. Phys International Con

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Processes and Devices - Tokyo, Japan (2-4 Sept. 1996)] 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) - Two-dimensional simulation of surface-state effects on slow current transients in GaAs MESFETs

✍ Yamada, T.; Horio, K. 📂 Article 📅 1996 🏛 Japan Soc. Appl. Phys 🌐 English ⚖ 208 KB

[Japan Soc. Appl. Phys 2002 Internationa

[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Bias-dependent drift resistance modeling for accurate DC and AC simulation of asymmetric HV-MOSFET

✍ Hefyene, N.; Vestiel, E.; Bakeroot, B.; Anghel, C.; Frere, S.; Ionescu, A.M.; Gi 📂 Article 📅 2002 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 294 KB

[Japan Soc. Appl. Phys International Con

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Process and Devices. SISPAD 99 - Kyoto, Japan (6-8 Sept. 1999)] 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) - New developments and old problems in grid generation and adaptation for TCAD applications

✍ Fichtner, W.; Krause, J.; Schmithusen, B.; Villablanca, L. 📂 Article 📅 1999 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 464 KB

[Japan Soc. Appl. Phys 2002 Internationa

[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - TCAD driven drain engineering for hot carrier reduction of 3.3V I/O p-MOSFET

✍ Miura, N.; Hayashi, H.; Komatsubara, H.; Mochizuki, A.; Fukuda, K. 📂 Article 📅 2002 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 211 KB