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[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Bias-dependent drift resistance modeling for accurate DC and AC simulation of asymmetric HV-MOSFET

✍ Scribed by Hefyene, N.; Vestiel, E.; Bakeroot, B.; Anghel, C.; Frere, S.; Ionescu, A.M.; Gillon, R.

Book ID: 115453064
Publisher: Japan Soc. Appl. Phys
Year: 2002
Tongue: Japanese
Weight: 294 KB
Volume: 0
Category: Article
ISBN-13: 9784891140274
DOI: 10.1109/sispad.2002.1034552

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