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✦ LIBER ✦

[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - GIDL simulation and optimization for 0.13 μm/1.5 V low power CMOS transistor design

✍ Scribed by Song Zhao, ; Shaoping Tang, ; Nandakumar, M.; Scott, D.B.; Sridhar, S.; Chatterjee, A.; Youngmin Kim, ; Shyh-Horng Yang, ; Shi-Charng Ai, ; Ashburn, S.P.

Book ID: 118267594
Publisher: Japan Soc. Appl. Phys
Year: 2002
Tongue: Japanese
Weight: 224 KB
Volume: 0
Category: Article
ISBN-13: 9784891140274
DOI: 10.1109/sispad.2002.1034512

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📜 SIMILAR VOLUMES

[Japan Soc. Appl. Phys 2002 Internationa

[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Self-consistent single-particle simulation

✍ Bufler, F.M.; Zechner, C.; Schenk, A.; Fichtner, W. 📂 Article 📅 2002 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 263 KB

[Japan Soc. Appl. Phys 2002 Internationa

[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Enhanced advancing front Delaunay meshing in TCAD

✍ Fleischmann, P.; Selberherr, S. 📂 Article 📅 2002 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 382 KB

[Japan Soc. Appl. Phys 2002 Internationa

[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - On the large-signal CMOS modeling and parameter extraction for RF applications

✍ Minkyu Je, ; Ickjin Kwon, ; Jeonghu Han, ; Hyungcheol Shin, ; Kwyro Lee, 📂 Article 📅 2002 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 259 KB

[Japan Soc. Appl. Phys 2002 Internationa

[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Characterization of multi-barrier tunneling diodes and vertical transistors using 2-D device simulation

✍ Kwan-Do Kim, ; Keun-Ho Lee, ; Seung-Jae Baik, ; Jun-Ha Lee, ; Tai-Kyung Kim, ; J 📂 Article 📅 2002 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 261 KB

[Japan Soc. Appl. Phys 2002 Internationa

[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Numerical simulation of a two-particle wave function in quantum wires

✍ Reggiani, S.; Bertoni, A.; Rudan, M. 📂 Article 📅 2002 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 287 KB

[Japan Soc. Appl. Phys 2002 Internationa

[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - System level model of damping effects for highly perforated torsional microstructures

✍ Schrag, G.; Sattler, R.; Wachutka, G. 📂 Article 📅 2002 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 290 KB