𝔖 Bobbio Scriptorium

✦ LIBER ✦

[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Self-consistent single-particle simulation

✍ Scribed by Bufler, F.M.; Zechner, C.; Schenk, A.; Fichtner, W.

Book ID: 120606862
Publisher: Japan Soc. Appl. Phys
Year: 2002
Tongue: Japanese
Weight: 263 KB
Category: Article
ISBN-13: 9784891140274
DOI: 10.1109/SISPAD.2002.1034541

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📜 SIMILAR VOLUMES

[Japan Soc. Appl. Phys 2002 Internationa

[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Enhanced advancing front Delaunay meshing in TCAD

✍ Fleischmann, P.; Selberherr, S. 📂 Article 📅 2002 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 382 KB

[Japan Soc. Appl. Phys 2002 Internationa

[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Numerical simulation of a two-particle wave function in quantum wires

✍ Reggiani, S.; Bertoni, A.; Rudan, M. 📂 Article 📅 2002 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 287 KB

[Japan Soc. Appl. Phys 2002 Internationa

[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Characterization of multi-barrier tunneling diodes and vertical transistors using 2-D device simulation

✍ Kwan-Do Kim, ; Keun-Ho Lee, ; Seung-Jae Baik, ; Jun-Ha Lee, ; Tai-Kyung Kim, ; J 📂 Article 📅 2002 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 261 KB

[Japan Soc. Appl. Phys 2002 Internationa

[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - On the large-signal CMOS modeling and parameter extraction for RF applications

✍ Minkyu Je, ; Ickjin Kwon, ; Jeonghu Han, ; Hyungcheol Shin, ; Kwyro Lee, 📂 Article 📅 2002 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 259 KB

[Japan Soc. Appl. Phys 2002 Internationa

[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - System level model of damping effects for highly perforated torsional microstructures

✍ Schrag, G.; Sattler, R.; Wachutka, G. 📂 Article 📅 2002 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 290 KB

[Japan Soc. Appl. Phys 2002 Internationa

[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Simulations of ultrathin, ultrashort double-gated MOSFETs with the density gradient transport model

✍ Lyumkis, E.; Mickevicius, R.; Penzin, O.; Polsky, B.; El Sayed, K.; Wettstein, A 📂 Article 📅 2002 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 254 KB