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✦ LIBER ✦

[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Simulations of ultrathin, ultrashort double-gated MOSFETs with the density gradient transport model

✍ Scribed by Lyumkis, E.; Mickevicius, R.; Penzin, O.; Polsky, B.; El Sayed, K.; Wettstein, A.; Fichtner, W.

Book ID: 121310714
Publisher: Japan Soc. Appl. Phys
Year: 2002
Tongue: Japanese
Weight: 254 KB
Category: Article
ISBN-13: 9784891140274
DOI: 10.1109/SISPAD.2002.1034570

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📜 SIMILAR VOLUMES

[Japan Soc. Appl. Phys 2002 Internationa

[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Self-consistent single-particle simulation

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✍ Fleischmann, P.; Selberherr, S. 📂 Article 📅 2002 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 382 KB

[Japan Soc. Appl. Phys 2002 Internationa

[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - On the large-signal CMOS modeling and parameter extraction for RF applications

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[Japan Soc. Appl. Phys 2002 Internationa

[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Numerical simulation of a two-particle wave function in quantum wires

✍ Reggiani, S.; Bertoni, A.; Rudan, M. 📂 Article 📅 2002 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 287 KB

[Japan Soc. Appl. Phys 2002 Internationa

[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Characterization of multi-barrier tunneling diodes and vertical transistors using 2-D device simulation

✍ Kwan-Do Kim, ; Keun-Ho Lee, ; Seung-Jae Baik, ; Jun-Ha Lee, ; Tai-Kyung Kim, ; J 📂 Article 📅 2002 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 261 KB

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[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Bias-dependent drift resistance modeling for accurate DC and AC simulation of asymmetric HV-MOSFET

✍ Hefyene, N.; Vestiel, E.; Bakeroot, B.; Anghel, C.; Frere, S.; Ionescu, A.M.; Gi 📂 Article 📅 2002 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 294 KB