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[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - TCAD driven drain engineering for hot carrier reduction of 3.3V I/O p-MOSFET

✍ Scribed by Miura, N.; Hayashi, H.; Komatsubara, H.; Mochizuki, A.; Fukuda, K.

Book ID: 111870175
Publisher: Japan Soc. Appl. Phys
Year: 2002
Tongue: Japanese
Weight: 211 KB
Volume: 0
Category: Article
ISBN-13: 9784891140274
DOI: 10.1109/sispad.2002.1034513

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