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[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Density functional theory based simulation of carrier transport in silicon carbide and silicon carbide-silicon dioxide interfaces

✍ Scribed by Akturk, A.; Salemi, S.; Goldsman, N.; Potbhare, S.; Lelis, A.

Book ID: 118176132
Publisher: IEEE
Year: 2011
Weight: 502 KB
Volume: 0
Category: Article
ISBN: 1612844197
DOI: 10.1109/sispad.2011.6035064

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