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[IEEE 2011 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2011) - Incheon, Korea (South) (2011.07.4-2011.07.7)] 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Experimental insights on the degradation and recovery of pMOSFET under non-uniform NBTI stresses

✍ Scribed by Yandong He, ; Ganggang Zhang,

Book ID: 120030216
Publisher: IEEE
Year: 2011
Weight: 331 KB
Category: Article
ISBN: 1457701596
DOI: 10.1109/IPFA.2011.5992767

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