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[IEEE 2010 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2010.06.15-2010.06.17)] 2010 Symposium on VLSI Technology - Programming disturbance and cell scaling in phase change memory: For up to 16nm based 4F2 cell

✍ Scribed by Lee, S.H.; Kim, M.S.; Do, G.S.; Kim, S.G.; Lee, H.J.; Sim, J.S.; Park, N.G.; Hong, S.B.; Jeon, Y.H.; Choi, K. S.; Park, H.C.; Kim, T.H.; Lee, J.U.; Kim, H.W.; Choi, M.R.; Lee, S.Y.; Kim, Y.S.; Kang, H.J.; Kim, J.H.; Kim, H.J.; Son, Y.S.; Lee, B.H.; Choi, J.H.; Kim, S.C.; Lee, J.H.; Hong, S. J.; Park, S.W.

Book ID: 120055357
Publisher: IEEE
Year: 2010
Weight: 588 KB
Category: Article
ISBN: 1424454514
DOI: 10.1109/VLSIT.2010.5556226

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