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[IEEE 2010 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2010.06.15-2010.06.17)] 2010 Symposium on VLSI Technology - Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond

✍ Scribed by Andrieu, F.; Weber, O.; Mazurier, J.; Thomas, O.; Noel, J-P.; Fenouillet-Beranger, C.; Mazellier, J-P.; Perreau, P.; Poiroux, T.; Morand, Y.; Morel, T.; Allegret, S.; Loup, V.; Barnola, S.; Martin, F.; Damlencourt, J-F.; Servin, I.; Casse, M.; Garros, X.; Rozeau, O.; Jaud, M-A.; Cibrario, G.; Cluzel, J.; Toffoli, A.; Allain, F.; Kies, R.; Lafond, D.; Delaye, V.; Tabone, C.; Tosti, L.; Brevard, L.; Gaud, P.; Paruchur, V.; Bourdelle, K.K.; Schwarzenbach, W.; Bonnin, O.; Nguyen, B-Y.; Doris, B.; Boeuf, F.; Skotnicki, T.; Faynot, O.

Book ID: 121531675
Publisher: IEEE
Year: 2010
Weight: 743 KB
Category: Article
ISBN: 1424454514
DOI: 10.1109/VLSIT.2010.5556122

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