[IEEE 2010 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2010.06.15-2010.06.17)] 2010 Symposium on VLSI Technology - Mobility enhancement over universal mobility in (100) silicon nanowire gate-all-around MOSFETs with width and height of less than 10nm range

✍ Scribed by Chen, Jiezhi; Saraya, Takuya; Hiramoto, Toshiro

• Book ID: 120604984
• Publisher: IEEE
• Year: 2010
• Weight: 753 KB
• Category: Article
• ISBN: 1424454514
• DOI: 10.1109/VLSIT.2010.5556217