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[IEEE 2010 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2010.06.15-2010.06.17)] 2010 Symposium on VLSI Technology - Short-channel performance and mobility analysis of - and -oriented tri-gate nanowire MOSFETs with raised source/drain extensions

โœ Scribed by Saitoh, M.; Nakabayashi, Y.; Itokawa, H.; Murano, M.; Mizushima, I.; Uchida, K.; Numata, T.


Book ID
125834860
Publisher
IEEE
Year
2010
Weight
448 KB
Category
Article
ISBN
1424454514

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