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[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - Effect of trapping on the critical voltage for degradation in GaN high electron mobility transistors

✍ Scribed by Demirtas, Sefa; del Alamo, Jesus A.

Book ID: 126515539
Publisher: IEEE
Year: 2010
Weight: 397 KB
Category: Article
ISBN: 1424454301
DOI: 10.1109/IRPS.2010.5488838

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