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[IEEE 2009 International Semiconductor Device Research Symposium (ISDRS 2009) - College Park, MD (2009.12.9-2009.12.11)] 2009 International Semiconductor Device Research Symposium - Design of SOI FinFET on 32 nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL)

✍ Scribed by Seongjae Cho, ; Jung Hoon Lee, ; O'uchi, S.; Endo, K.; Masahara, M.; Byung-Gook Park,

Book ID: 121531642
Publisher: IEEE
Year: 2009
Weight: 286 KB
Category: Article
ISBN: 1424460301
DOI: 10.1109/ISDRS.2009.5378143

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