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[IEEE 2009 International Semiconductor Device Research Symposium (ISDRS 2009) - College Park, MD (2009.12.9-2009.12.11)] 2009 International Semiconductor Device Research Symposium - Role of fin thickness on ballistic transport in nanoscale FinFETs

✍ Scribed by Islam, R.; Amin, E.M.; Baten, M.Z.; Khosru, Q.D.M.

Book ID: 120920971
Publisher: IEEE
Year: 2009
Weight: 117 KB
Category: Article
ISBN: 1424460301
DOI: 10.1109/ISDRS.2009.5378078

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