[IEEE 2009 International Semiconductor Device Research Symposium (ISDRS 2009) - College Park, MD (2009.12.9-2009.12.11)] 2009 International Semiconductor Device Research Symposium - Design and yields of 1200-V recessed-implanted-gate SiC vertical-channel JFETs for power switching applications

[IEEE 2009 International Semiconductor D

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[IEEE 2009 International Semiconductor D

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[IEEE 2009 International Semiconductor D

✍ Tahy, K.; Chuanxin Lian, ; Huili Xing, ; Jena, D. 📂 Article 📅 2009 🏛 IEEE ⚖ 253 KB

[IEEE 2009 International Semiconductor D

✍ Hung, H.; Chang, S.J.; Young, S.J.; Lin, Y.C.; Wang, S.M.; Chen, C.H. 📂 Article 📅 2009 🏛 IEEE ⚖ 136 KB

[IEEE 2009 International Semiconductor D

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[IEEE 2009 International Semiconductor D

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