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[IEEE 2009 International Semiconductor Device Research Symposium (ISDRS 2009) - College Park, MD (2009.12.9-2009.12.11)] 2009 International Semiconductor Device Research Symposium - Simulation study of device physics issues in III–V MOSFETs at 10 nm node

✍ Scribed by Yang Liu, ; Xufeng Wang, ; Luisier, M.; Lundstrom, M.S.

Book ID: 121786237
Publisher: IEEE
Year: 2009
Weight: 362 KB
Category: Article
ISBN: 1424460301
DOI: 10.1109/ISDRS.2009.5378204

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