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[IEEE 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - San Diego, CA, USA (2009.09.9-2009.09.11)] 2009 International Conference on Simulation of Semiconductor Processes and Devices - Atomistic Simulation of Band-to-Band Tunneling in III-V Nanowire Field-Effect Transistors

✍ Scribed by Basu, Dipanjan; Register, Leonard F.; Gilbert, Matthew J.; Banerjee, Sanjay K.

Book ID: 120970022
Publisher: IEEE
Year: 2009
Weight: 326 KB
Category: Article
DOI: 10.1109/SISPAD.2009.5290220

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